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| PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX549 ZTX549A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25C derate above 25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage ZTX549A Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio ZTX549 ZTX549A VBE(sat) VBE(on) hFE 70 80 40 100 150 -0.9 -0.85 200 130 80 160 200 3-191 300 500 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -0.25 -0.50 MIN. -35 -30 -5 -0.1 -10 -0.1 -0.50 -0.75 -0.30 -1.25 -1 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. -35 -30 -5 -2 -1 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W mW/ C C -55 to +200 UNIT V V V A A A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). CONDITIONS. IC=-100A IC=-10mA IE=-100A VCB=-30V VCB=-30V, Tamb=100C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-100mA, IB=-1mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-500mA, VCE=-2V* IC=-500mA, VCE=-2V* V V V V V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZTX549 ZTX549A ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Transition Frequency Output Capacitance Switching Times SYMBOL fT Cobo ton toff 300 50 MIN. 100 25 TYP. MAX. UNIT MHz pF ns ns CONDITIONS. IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA 3-192 ZTX549 ZTX549A TYPICAL CHARACTERISTICS td,tr,tf (ns) 180 0.8 160 140 ts (ns) IB1=IB2=IC/10 1800 1600 1400 ts tr 1200 1000 td 800 600 400 tf 0.01 0.1 1 200 0 VCE(sat) - (Volts) 0.6 120 Switching time 100 80 60 40 20 0.4 IC/IB=100 0.2 IC/IB=10 0 0.01 0.1 1 10 0 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 200 1.4 160 120 1.2 VBE(sat) - (Volts) hFE - Gain VCE=2V 1.0 IC/IB=100 IC/IB=10 80 0.8 40 0.6 0.001 0.01 0.1 1 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 1.0 IC/IB=10 VBE(sat) v IC Single Pulse Test at Tamb=25C IC - Collector Current (Amps) VBE - (Volts) 0.9 1 0.8 0.7 0.1 D.C. 1s 100ms 10ms 1.0ms 0.3ms 0.1ms 0.6 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-193 |
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